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RB411D Diodes Schottky barrier diode RB411D !Applications Low power rectification For switching power supply !External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 0.5 3 125 -40~+125 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals Note) sensitive product handling required. Symbol VF1 VF2 IR CT Min. - - - - Typ. - - - 20 Max. 0.3 0.5 30 - Unit V V A pF IF=10mA IF=500mA VR=10V Conditions VR=10V, f=1MHz 0.3~0.6 D3E !Features 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability. 1.6 +0.2 -0.1 2.80.2 0~0.1 +0.1 0.4 -0.05 +0.1 0.15 -0.06 RB411D Diodes !Electrical characteristic curves (Ta = 25C) Ta=125C 100m Ta =12 Ta= 5C 75 C Ta =2 Ta =- 2 5 C 5C 1m Ta=75C CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 10m 1 000 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 100 10m Typ. pulse measurement 100 1m 10 Ta=25C 10 100 1 Typ. pulse measurement 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristic |
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