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 RB411D
Diodes
Schottky barrier diode
RB411D
!Applications Low power rectification For switching power supply !External dimensions (Units : mm)
2.90.2 1.90.2 0.95 0.95
1.1 +0.2 -0.1 0.80.1
(All leads have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 20 0.5 3 125 -40~+125
Unit V V A A
C C
!Electrical characteristics (Ta = 25C)
Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals
Note) sensitive product handling required.
Symbol VF1 VF2 IR CT
Min. - - - -
Typ. - - - 20
Max. 0.3 0.5 30 -
Unit V V A pF IF=10mA IF=500mA VR=10V
Conditions
VR=10V, f=1MHz
0.3~0.6
D3E
!Features 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability.
1.6 +0.2 -0.1
2.80.2
0~0.1
+0.1 0.4 -0.05
+0.1 0.15 -0.06
RB411D
Diodes
!Electrical characteristic curves (Ta = 25C)
Ta=125C
100m
Ta =12 Ta= 5C 75 C Ta =2 Ta =- 2 5 C 5C
1m
Ta=75C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1
10m
1 000
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
100
10m
Typ. pulse measurement
100
1m
10
Ta=25C
10
100
1
Typ. pulse measurement
10 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1 0
5
10
15
20
25
30
35
1 0
5
10
15
20
25
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristic


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